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NTE5437 & NTE5438 Silicon Controlled Rectifier (SCR) 8 Amp
Description: The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed for general purpose high voltage applications where gate sensitivity is required. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Repetitive Peak Off-State Voltage (TJ = -40 to +125C, RGK = 1k), VDRM, VRRM NTE5437 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V On-State Current (All Conducting Angles, TC = +85C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Average On-State Current (Half Cycle, = 180, TC = +85C), IT(AV) . . . . . . . . . . . . . . . . . . . . 5.1A Non-Repetitive On-State Current, ITSM Half Cycle, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88A Half Cycle, 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A Fusing Current (t= 10ms, Half Cycle), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A2s Peak Reverse Gate Voltage (IGR = 50A), VGRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Peak Gate Current (10s Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Dissipation (10s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Oprating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), TL . . . . . . . . . . . . . . . +250C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Off-State Leakage Current Symbol Test Conditions TJ = +125C TJ = +25C Min - - Max 0.5 5.0 Unit mA A IDRM, IRRM VDRM + VRRM = Rated Voltage, RGK = 1k
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter On-State Voltage On-State Threshold Voltage On-State Slope Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-Off Time Symbol VT VT(TO) rT IGT VGT IH IL dv/dt di/dt tgd tq Test Conditions IT = 16A, TJ = +25C TJ = +125C TJ = +125C VD = 7V VD = 7V RGK = 1k RGK = 1k VD = .67 x VDRM, RGK = 1k, TJ = +125C IG = 10mA, diG/dt = 0.1A/s, TJ = +125C IG = 10mA, diG/dt = 0.1A/s TC = +85C, VD = .67 x VDRM, VR = 35V, IT = 5.1A Min - - - - - - - 5 100 - - Max 1.95 1.05 65 200 2.0 10 20 - - 500 100 Unit V V m A V mA mA V/s A/s ns s
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
Anode .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Cathode .100 (2.54)
Gate Anode

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